类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 接口IC类型 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大结点温度(Tj) | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 输出电流流向 | 反馈上限-最大值 (Crss) | 电源电压1-最小值 | 电源电压1-最大值 | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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![]() | IRF7750TRPBF | Infineon Technologies | 数据表 | 20000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | 4.7A | 2 | 180 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | 1W | IRF7750PBF | Dual | 1W | 15 ns | 1W | 2 P-Channel (Dual) | 30mOhm @ 4.7A, 4.5V | 1.2V @ 250μA | 1700pF @ 15V | 39nC @ 5V | 54ns | 20V | 210 ns | 4.7A | -1.2V | 12V | -20V | -20V | 1.7nF | 逻辑电平门 | 55mOhm | 30 mΩ | -1.2 V | 1.0414mm | 3.0988mm | 4.4958mm | 无 | 无SVHC | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ECH8664R-TL-H | ON Semiconductor | 数据表 | 21000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | LIFETIME (Last Updated: 2 days ago) | 表面贴装 | 8-SMD, Flat Lead | 8 | 3.3 μs | 150°C TJ | Tape & Reel (TR) | 2008 | e6 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 1.4W | 8 | Dual | 1.4W | 270 ns | 2 N-Channel (Dual) | 23.5m Ω @ 3.5A, 4.5V | 无卤素 | 10nC @ 4.5V | 850ns | 30V | 1.7 μs | 7A | 12V | 逻辑电平门 | 900μm | 2.9mm | 2.3mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
QH8MA2TCR | ROHM Semiconductor | 数据表 | 12000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | SILICON | 4.5A 3A | 2 | 150°C TJ | Cut Tape (CT) | 2014 | yes | 活跃 | 1 (Unlimited) | 8 | 1.25W | DUAL | 未说明 | 未说明 | R-PDSO-F8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 35m Ω @ 4.5A, 10V | 2.5V @ 1mA | 365pF @ 10V | 8.4nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 3A | 4.5A | 0.0056Ohm | 12A | 30V | 1.5 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NX3008PBKV,115 | Nexperia USA Inc. | 数据表 | 8000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | SOT-563, SOT-666 | YES | 6 | SILICON | 2 | 65 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 500mW | FLAT | 6 | R-PDSO-G3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 390mW | 19 ns | 2 P-Channel (Dual) | SWITCHING | 4.1 Ω @ 200mA, 4.5V | 1.1V @ 250μA | 46pF @ 15V | 0.72nC @ 4.5V | 30ns | 30V | 38 ns | 220mA | 8V | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD88599Q5DC | Texas Instruments | 数据表 | 4476 In Stock | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 22-PowerTFDFN | YES | 22 | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 22 | EAR99 | Matte Tin (Sn) | DUAL | 无铅 | 260 | 1 | not_compliant | 未说明 | CSD88599 | 54V | 12W | 2 N-Channel (Half Bridge) | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 4840pF @ 30V | 27nC @ 4.5V | 60V | 基于半桥的外设驱动器 | Standard | 水槽 | 4.5V | 16V | 6mm | 5mm | 850μm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMC8032L | ON Semiconductor | 数据表 | 236 In Stock | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | ACTIVE (Last Updated: 3 hours ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 196mg | SILICON | 7A | 2 | 13 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 12W | 无铅 | 未说明 | 未说明 | S-PDSO-N4 | 2 | Dual | 增强型MOSFET | DRAIN | 5.5 ns | 1.9W | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 7A, 10V | 3V @ 250μA | 720pF @ 20V | 11nC @ 10V | 1.2ns | 1.3 ns | 20A | 20V | 7A | 40V | 50A | 13 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 750μm | 3mm | 3mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
![]() | FDJ1032C | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | SC75-6 FLMP | 3.2A 2.8A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 未说明 | compliant | 未说明 | 900mW | N and P-Channel | 90m Ω @ 3.2A, 4.5V | 1.5V @ 250μA | 200pF @ 10V | 3nC @ 4.5V | 20V | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMA3027PZ | ON Semiconductor | 数据表 | 100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 4 days ago) | 表面贴装 | 表面贴装 | 6-VDFN Exposed Pad | 6 | 40mg | SILICON | 17 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | 无铅 | 未说明 | 未说明 | Dual | 增强型MOSFET | 1.4W | DRAIN | 5.2 ns | 700mW | 2 P-Channel (Dual) | SWITCHING | 87m Ω @ 3.3A, 10V | 3V @ 250μA | 435pF @ 15V | 10nC @ 10V | 3ns | 30V | 11 ns | 3.3A | -1.9V | 25V | 0.087Ohm | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 80 pF | 725μm | 2mm | 2mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
VEC2415-TL-E | ON Semiconductor | 数据表 | 67 In Stock | - | 最小起订量: 1 最小包装量: 1 | ACTIVE, NOT REC (Last Updated: 1 week ago) | 表面贴装 | 8-SMD, Flat Lead | 8 | 41 ns | 150°C TJ | Tape & Reel (TR) | 2013 | e6 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 1W | 8 | Dual | 7.3 ns | 2 N-Channel (Dual) | 80m Ω @ 1.5A, 10V | 2.6V @ 1mA | 505pF @ 20V | 10nC @ 10V | 60V | 3A | 20V | 逻辑电平门 | 750μm | 2.9mm | 2.3mm | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVMFD5C466NT1G | ON Semiconductor | 数据表 | 26000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 48 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 8-PowerTDFN | 14A Ta 49A Tc | -55°C~175°C TJ | Tape & Reel (TR) | e3 | yes | 活跃 | 1 (Unlimited) | Tin (Sn) | 未说明 | 未说明 | 3W Ta 38W Tc | 2 N-Channel (Dual) | 8.1m Ω @ 15A, 10V | 3.5V @ 250μA | 650pF @ 25V | 11nC @ 10V | 40V | Standard | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP2004DWK-7 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 6.010099mg | SILICON | 2 | -65°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 900mOhm | Matte Tin (Sn) | 低阈值 | 250mW | 鸥翼 | 260 | 40 | 6 | Dual | 增强型MOSFET | 250mW | 2 P-Channel (Dual) | SWITCHING | 900m Ω @ 430mA, 4.5V | 1V @ 250μA | 175pF @ 16V | 20V | 430mA | 8V | 0.43A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 2.2mm | 1.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ZXMP6A18DN8TA | Diodes Incorporated | 数据表 | 50 In Stock | - | 最小起订量: 1 最小包装量: 1 | 17 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 3.7A | 2 | 55 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 55mOhm | Matte Tin (Sn) | -60V | 2.1W | 鸥翼 | 260 | -4.6A | 40 | 8 | 2 | Dual | 增强型MOSFET | 2.1W | 4.6 ns | 1.8W | 2 P-Channel (Dual) | SWITCHING | 55m Ω @ 3.5A, 10V | 1V @ 250μA (Min) | 1580pF @ 30V | 44nC @ 10V | 5.8ns | 60V | 23 ns | -4.8A | -1V | 20V | 3.7A | -60V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.7mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
![]() | FDG6318P | ON Semiconductor | 数据表 | 6000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 28mg | SILICON | 2 | 6 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2003 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | 780MOhm | -20V | 300mW | 鸥翼 | -500mA | Dual | 增强型MOSFET | 300mW | 6 ns | 2 P-Channel (Dual) | SWITCHING | 780m Ω @ 500mA, 4.5V | 1.5V @ 250μA | 83pF @ 10V | 1.2nC @ 4.5V | 12ns | 20V | 12 ns | 500mA | 12V | 0.5A | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1mm | 2mm | 1.25mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7507PBF | Infineon Technologies | 数据表 | 5284 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | 2.4A 1.7A | 2 | Tube | 1998 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 150°C | -55°C | HIGH RELIABILITY | 1.25W | 鸥翼 | IRF7507PBF | Dual | 增强型MOSFET | 1.25W | N and P-Channel | SWITCHING | 140m Ω @ 1.7A, 4.5V | 700mV @ 250μA (Min) | 260pF @ 15V | 8nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 2.4A | 12V | 1.3A | 0.14Ohm | 19A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 910μm | 3.05mm | 3.05mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMHC4035LSD-13 | Diodes Incorporated | 数据表 | 75 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | 4.5A 3.7A | 36.3 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 1.5W | 2 | 3.6 ns | 2 N and 2 P-Channel (H-Bridge) | 45m Ω @ 3.9A, 10V | 3V @ 250μA | 574pF @ 20V | 12.5nC @ 10V | 2.9ns | 15.3 ns | 3.7A | 20V | 40V | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOD603A | Alpha & Omega Semiconductor Inc. | 数据表 | 11000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 5 | 3.5A 3A | -55°C~175°C TJ | Tape & Reel (TR) | 2009 | 活跃 | 1 (Unlimited) | 2W | N and P-Channel, Common Drain | 60m Ω @ 12A, 10V | 3V @ 250μA | 540pF @ 30V | 10nC @ 10V | 60V | 3A | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 2N7002VAC-7 | Diodes Incorporated | 数据表 | 18000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 2N7002VAC-7 | 2 | 50 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | HIGH RELIABILITY | 150mW | FLAT | 260 | 40 | 6 | Dual | 增强型MOSFET | 150mW | 50 ns | 2 N-Channel (Dual) | SWITCHING | 7.5 Ω @ 50mA, 5V | 2.5V @ 250μA | 50pF @ 25V | 60V | 280mA | 20V | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | 5 pF | 600μm | 1.6mm | 1.2mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN2041LSD-13 | Diodes Incorporated | 数据表 | 665 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 73.992255mg | SILICON | 2 | 22.1 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.16W | 鸥翼 | 260 | 40 | DMN2041LSD | 8 | 增强型MOSFET | 1.16W | 4.69 ns | 2 N-Channel (Dual) | SWITCHING | 28m Ω @ 6A, 4.5V | 1.2V @ 250μA | 550pF @ 10V | 15.6nC @ 10V | 13.19ns | 20V | 6.43 ns | 7.63A | 12V | 7.6A | 30A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 4.95mm | 3.95mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | BSG0810NDIATMA1 | Infineon Technologies | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 26 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 19A 39A | 2 | -55°C~155°C TJ | Tape & Reel (TR) | 2013 | OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 7 | Tin (Sn) | 2.5W | 无铅 | 未说明 | not_compliant | 未说明 | R-PDSO-N7 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | SOURCE | 2.5W | 2 N-Channel (Dual) Asymmetrical | 3m Ω @ 20A, 10V | 2V @ 250μA | 无卤素 | 1040pF @ 12V | 8.4nC @ 4.5V | 39A | 16V | 25V | 19A | 0.004Ohm | 160A | 30 mJ | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLJD3119CTAG | ON Semiconductor | 数据表 | 66010 In Stock | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 6 days ago) | 表面贴装 | 6-WDFN Exposed Pad | YES | 6 | SILICON | 2.6A 2.3A | 2 | 13.7 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2007 | µCool™ | e3 | yes | Obsolete | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | Tin (Sn) | 710mW | NTLJD3119C | 6 | Dual | 增强型MOSFET | 710mW | N and P-Channel | 65m Ω @ 3.8A, 4.5V | 1V @ 250μA | 271pF @ 10V | 3.7nC @ 4.5V | 13.2ns | N-CHANNEL AND P-CHANNEL | 13.2 ns | 4.6A | 700mV | 8V | 3.8A | -20V | 18A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 无 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
QH8MA3TCR | ROHM Semiconductor | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | SILICON | 7A 5.5A | 2 | 150°C TJ | Cut Tape (CT) | 2015 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.5W | DUAL | 未说明 | not_compliant | 未说明 | R-PDSO-F8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 29m Ω @ 7A, 10V | 2.5V @ 1mA | 300pF @ 15V | 7.2nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 5.5A | 0.029Ohm | 18A | 30V | 1.8 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF5852TRPBF | Infineon Technologies | 数据表 | 300000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 6-TSOP | 2.7A | 2 | 15 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 2 (1 Year) | SMD/SMT | 150°C | -55°C | 960mW | IRF5852PBF | Dual | 960mW | 6.6 ns | 960mW | 2 N-Channel (Dual) | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250μA | 400pF @ 15V | 6nC @ 4.5V | 1.2ns | 20V | 2.4 ns | 2.7A | 1.25V | 12V | 20V | 20V | 400pF | 逻辑电平门 | 90mOhm | 90 mΩ | 1.25 V | 900μm | 3mm | 1.5mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NX3008CBKV,115 | Nexperia USA Inc. | 数据表 | 850 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | SOT-563, SOT-666 | YES | SILICON | 400mA 220mA | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | Tin (Sn) | 低阈值 | DUAL | FLAT | 未说明 | 未说明 | 6 | R-PDSO-F6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | N and P-Channel | SWITCHING | 1.4 Ω @ 350mA, 4.5V | 1.1V @ 250μA | 50pF @ 15V | 0.68nC @ 4.5V | 30V | N-CHANNEL AND P-CHANNEL | 0.4A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | TC6215TG-G | Microchip Technology | 数据表 | 2000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 84.99187mg | SILICON | 2 | 17.2 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 鸥翼 | 260 | 40 | TC621 | 不合格 | 2 | Dual | 增强型MOSFET | 2.5 ns | N and P-Channel | SWITCHING | 4 Ω @ 2A, 10V | 2V @ 1mA | 120pF @ 25V | 2.3ns | 150V | N-CHANNEL AND P-CHANNEL | 11.3 ns | 36A | 20V | 5Ohm | -150V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.65mm | 4.9mm | 3.8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMG6968UTS-13 | Diodes Incorporated | 数据表 | 579 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 157.991892mg | SILICON | 2 | 562 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1W | 鸥翼 | 260 | 40 | 8 | 2 | Dual | 增强型MOSFET | 53 ns | 2 N-Channel (Dual) Common Drain | SWITCHING | 23m Ω @ 6.5A, 4.5V | 950mV @ 250μA | 143pF @ 10V | 8.8nC @ 4.5V | 78ns | 20V | 234 ns | 5.2A | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无 | 无SVHC | ROHS3 Compliant |
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